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Exploration of Non-Volatile MTJ/CMOS Circuits for DPA-Resistant Embedded Hardware

  • S. Dinesh Kumar
  • , Himanshu Thapliyal

Producción científica: Articlerevisión exhaustiva

24 Citas (Scopus)

Resumen

Magnetic tunnel junction (MTJ/CMOS-based Logic-in-Memory (LiM) circuits have nearly zero leakage power dissipation, and they are very appropriate to design low-power hardware. However, the differences in power consumption between the switching of MTJ devices increase the vulnerability of differential power analysis (DPA)-based side-channel attacks. Furthermore, the MTJ/CMOS hybrid logic circuits that require frequent switching of MTJs are not very energy efficient due to the significant energy required to switch the MTJ devices. MTJ/CMOS circuits consume uniform power if there is no switching of MTJs. In this article, we have investigated the novel approach of building cryptographic hardware in MTJ/CMOS circuits using a lookup table (LUT)-based method where the data stored in MTJs are constant during the entire encryption/decryption operation. As a case study, we have designed a non-linear bijective function of the PRESENT-80 lightweight cryptographic algorithm called substitution box or S-box and one round of PRESENT-80 cryptographic hardware using MTJ/CMOS circuits. The designs are simulated using 45 nm CMOS technology with perpendicular anisotropy CoFeB/MgO MTJ model using Cadence Spectre simulator. From our simulations, we found that the PRESENT-80 S-box circuit and one round of PRESENT-80 cryptographic hardware implemented using MTJ/CMOS circuits save up to 26% and 29% of energy, respectively, compared to the conventional CMOS-based designs at 50 MHz. Furthermore, the security of the MTJ/CMOS circuits has been evaluated by performing a simulation-based DPA attack. From our simulations, we found that the PRESENT-80 cryptographic hardware implemented using MTJ/CMOS circuits is resistant against DPA attack. Low-energy and DPA-resistant property along with high density and low leakage make MTJ/CMOS circuits suitable to implement in low-energy and secure embedded cryptographic hardware.

Idioma originalEnglish
Número de artículo8903621
PublicaciónIEEE Transactions on Magnetics
Volumen55
N.º12
DOI
EstadoPublished - dic 2019

Nota bibliográfica

Publisher Copyright:
© 1965-2012 IEEE.

Financiación

ACKNOWLEDGMENT This work was supported in part by the Kentucky Science and Engineering Foundation through the Kentucky Science and Technology Corporation under Grant KSEF-3526-RDE-019.

FinanciadoresNúmero del financiador
Kentucky Science and Technology CorporationKSEF-3526-RDE-019
Kentucky Science and Engineering Foundation

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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