GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach

Zhi Chen; S. Noor Mohammad

doi:10.1049/el:19971276

GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach

Zhi Chen
, S. Noor Mohammad

Producción científica: Article › revisión exhaustiva

4 Citas (Scopus)

Resumen

A high quality Si₃N₄/Si//p-GaAs MIS structure has been obtained by the ex-situ growth approach. An interface trap density as low as 9 × 10¹⁰eV^-1cm^-2 was obtained from the conductance measurements. A depletion-mode MISFET with a transconductance of 85mS/mm has been fabricated using this exsitu growth approach.

Idioma original	English
Páginas (desde-hasta)	1906-1907
Número de páginas	2
Publicación	Electronics Letters
Volumen	33
N.º	22
DOI	https://doi.org/10.1049/el:19971276
Estado	Published - oct 23 1997

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19971276

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title = "GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach",

abstract = "A high quality Si3N4/Si//p-GaAs MIS structure has been obtained by the ex-situ growth approach. An interface trap density as low as 9 × 1010eV-1cm-2 was obtained from the conductance measurements. A depletion-mode MISFET with a transconductance of 85mS/mm has been fabricated using this exsitu growth approach.",

keywords = "Metal-insulator-semiconductor devices, Molecular beam epitaxy",

author = "Zhi Chen and Mohammad, \{S. Noor\}",

year = "1997",

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doi = "10.1049/el:19971276",

language = "English",

volume = "33",

pages = "1906--1907",

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T1 - GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach

AU - Chen, Zhi

AU - Mohammad, S. Noor

PY - 1997/10/23

Y1 - 1997/10/23

N2 - A high quality Si3N4/Si//p-GaAs MIS structure has been obtained by the ex-situ growth approach. An interface trap density as low as 9 × 1010eV-1cm-2 was obtained from the conductance measurements. A depletion-mode MISFET with a transconductance of 85mS/mm has been fabricated using this exsitu growth approach.

AB - A high quality Si3N4/Si//p-GaAs MIS structure has been obtained by the ex-situ growth approach. An interface trap density as low as 9 × 1010eV-1cm-2 was obtained from the conductance measurements. A depletion-mode MISFET with a transconductance of 85mS/mm has been fabricated using this exsitu growth approach.

KW - Metal-insulator-semiconductor devices

KW - Molecular beam epitaxy

UR - https://www.scopus.com/pages/publications/0031245459

UR - https://www.scopus.com/pages/publications/0031245459#tab=citedBy

U2 - 10.1049/el:19971276

DO - 10.1049/el:19971276

M3 - Article

AN - SCOPUS:0031245459

SN - 0013-5194

VL - 33

SP - 1906

EP - 1907

JO - Electronics Letters

JF - Electronics Letters

IS - 22

ER -

GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach

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