High-throughput nanogap formation using single ramp feedback control

Stephen L. Johnson; D. Patrick Hunley; Abhishek Sundararajan; A. T.Charlie Johnson; Douglas R. Strachan

doi:10.1109/TNANO.2010.2080283

High-throughput nanogap formation using single ramp feedback control

Stephen L. Johnson
, D. Patrick Hunley
, Abhishek Sundararajan
, A. T.Charlie Johnson
, Douglas R. Strachan

Physics And Astronomy

Producción científica: Article › revisión exhaustiva

9 Citas (Scopus)

Resumen

We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.

Idioma original	English
Número de artículo	5582297
Páginas (desde-hasta)	806-809
Número de páginas	4
Publicación	IEEE Transactions on Nanotechnology
Volumen	10
N.º	4
DOI	https://doi.org/10.1109/TNANO.2010.2080283
Estado	Published - jul 2011

Nota bibliográfica

Funding Information:
Manuscript received May 10, 2010; revised July 27, 2010; accepted September 15, 2010. Date of publication September 23, 2010; date of current version July 8, 2011. This work was supported by the National Science Foundation (NSF) under Grant DMR-0805136, by the Kentucky NSF Experimental Program to Stimulate Competitive Research (EPSCoR) program under Award EPS-0814194, and by the Center for Advanced Materials (CAM), University of Kentucky (UK). The review of this paper was arranged by Associate Editor G. Ramanath.

Financiación

Manuscript received May 10, 2010; revised July 27, 2010; accepted September 15, 2010. Date of publication September 23, 2010; date of current version July 8, 2011. This work was supported by the National Science Foundation (NSF) under Grant DMR-0805136, by the Kentucky NSF Experimental Program to Stimulate Competitive Research (EPSCoR) program under Award EPS-0814194, and by the Center for Advanced Materials (CAM), University of Kentucky (UK). The review of this paper was arranged by Associate Editor G. Ramanath.

Financiadores	Número del financiador
Center for Advanced Molecular Materials
NSF-Kentucky EPSCoR	EPS-0814194
National Science Foundation (NSF)	DMR-0805136
University of Kentucky

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2010.2080283

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title = "High-throughput nanogap formation using single ramp feedback control",

abstract = "We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.",

keywords = "Electromigration, molecular electronics, nanoelectronics, nanogap electrodes, parallel nanogaps",

author = "Johnson, \{Stephen L.\} and Hunley, \{D. Patrick\} and Abhishek Sundararajan and Johnson, \{A. T.Charlie\} and Strachan, \{Douglas R.\}",

note = "Funding Information: Manuscript received May 10, 2010; revised July 27, 2010; accepted September 15, 2010. Date of publication September 23, 2010; date of current version July 8, 2011. This work was supported by the National Science Foundation (NSF) under Grant DMR-0805136, by the Kentucky NSF Experimental Program to Stimulate Competitive Research (EPSCoR) program under Award EPS-0814194, and by the Center for Advanced Materials (CAM), University of Kentucky (UK). The review of this paper was arranged by Associate Editor G. Ramanath.",

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AU - Hunley, D. Patrick

AU - Sundararajan, Abhishek

AU - Johnson, A. T.Charlie

AU - Strachan, Douglas R.

N1 - Funding Information: Manuscript received May 10, 2010; revised July 27, 2010; accepted September 15, 2010. Date of publication September 23, 2010; date of current version July 8, 2011. This work was supported by the National Science Foundation (NSF) under Grant DMR-0805136, by the Kentucky NSF Experimental Program to Stimulate Competitive Research (EPSCoR) program under Award EPS-0814194, and by the Center for Advanced Materials (CAM), University of Kentucky (UK). The review of this paper was arranged by Associate Editor G. Ramanath.

PY - 2011/7

Y1 - 2011/7

N2 - We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.

AB - We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.

KW - Electromigration

KW - molecular electronics

KW - nanoelectronics

KW - nanogap electrodes

KW - parallel nanogaps

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UR - https://www.scopus.com/pages/publications/79960271890#tab=citedBy

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M3 - Article

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SN - 1536-125X

VL - 10

SP - 806

EP - 809

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

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M1 - 5582297

ER -

High-throughput nanogap formation using single ramp feedback control

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Financiación

ASJC Scopus subject areas

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