Hydrogen sensors based on Ni/SiO2/Si MOS capacitors

Chi Lu; Zhi Chen; Kozo Saito

doi:10.1016/j.snb.2006.06.029

Hydrogen sensors based on Ni/SiO₂/Si MOS capacitors

Chi Lu
, Zhi Chen
, Kozo Saito

Producción científica: Article › revisión exhaustiva

33 Citas (Scopus)

Resumen

A novel hydrogen sensor based on Ni/SiO₂/Si MOS capacitors were fabricated and characterized at hydrogen concentrations ranging from 50 to 1000 ppm at an operating temperature of 140 °C. The highest response occurs at the same bias voltage (-0.4 V) for all the concentration levels measured and is about 18% at 50 ppm. The response/recovery transients of the Ni-based sensors are similar to those of the Pd-based hydrogen sensors. A Langmuir isotherm model is adapted to explain the observed phenomena, which is in agreement with our experimental results.

Idioma original	English
Páginas (desde-hasta)	556-559
Número de páginas	4
Publicación	Sensors and Actuators, B: Chemical
Volumen	122
N.º	2
DOI	https://doi.org/10.1016/j.snb.2006.06.029
Estado	Published - mar 26 2007

Nota bibliográfica

Funding Information:
This work was supported by National Science Foundation (EPSCOR0447479), Department of Energy (DE-FG02-00ER4582 and DE-FG26-04NT42171), and Army Research Laboratory (W911NF-04-2-0023).

Financiación

This work was supported by National Science Foundation (EPSCOR0447479), Department of Energy (DE-FG02-00ER4582 and DE-FG26-04NT42171), and Army Research Laboratory (W911NF-04-2-0023).

Financiadores	Número del financiador
U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China	EPSCOR0447479
U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China
U.S. Department of Energy Oak Ridge National Laboratory U.S. Department of Energy National Science Foundation National Energy Research Scientific Computing Center	DE-FG02-00ER4582, DE-FG26-04NT42171
U.S. Department of Energy Oak Ridge National Laboratory U.S. Department of Energy National Science Foundation National Energy Research Scientific Computing Center
Army Research Laboratory	W911NF-04-2-0023
Army Research Laboratory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.snb.2006.06.029

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title = "Hydrogen sensors based on Ni/SiO2/Si MOS capacitors",

abstract = "A novel hydrogen sensor based on Ni/SiO2/Si MOS capacitors were fabricated and characterized at hydrogen concentrations ranging from 50 to 1000 ppm at an operating temperature of 140 °C. The highest response occurs at the same bias voltage (-0.4 V) for all the concentration levels measured and is about 18\% at 50 ppm. The response/recovery transients of the Ni-based sensors are similar to those of the Pd-based hydrogen sensors. A Langmuir isotherm model is adapted to explain the observed phenomena, which is in agreement with our experimental results.",

keywords = "C-V curve, Hydrogen sensor, MOS capacitor, Ni",

author = "Chi Lu and Zhi Chen and Kozo Saito",

note = "Funding Information: This work was supported by National Science Foundation (EPSCOR0447479), Department of Energy (DE-FG02-00ER4582 and DE-FG26-04NT42171), and Army Research Laboratory (W911NF-04-2-0023). ",

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AU - Saito, Kozo

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N2 - A novel hydrogen sensor based on Ni/SiO2/Si MOS capacitors were fabricated and characterized at hydrogen concentrations ranging from 50 to 1000 ppm at an operating temperature of 140 °C. The highest response occurs at the same bias voltage (-0.4 V) for all the concentration levels measured and is about 18% at 50 ppm. The response/recovery transients of the Ni-based sensors are similar to those of the Pd-based hydrogen sensors. A Langmuir isotherm model is adapted to explain the observed phenomena, which is in agreement with our experimental results.

AB - A novel hydrogen sensor based on Ni/SiO2/Si MOS capacitors were fabricated and characterized at hydrogen concentrations ranging from 50 to 1000 ppm at an operating temperature of 140 °C. The highest response occurs at the same bias voltage (-0.4 V) for all the concentration levels measured and is about 18% at 50 ppm. The response/recovery transients of the Ni-based sensors are similar to those of the Pd-based hydrogen sensors. A Langmuir isotherm model is adapted to explain the observed phenomena, which is in agreement with our experimental results.

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