Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers

Sanghyun Lee; Kent J. Price; Edgardo Saucedo; Sergio Giraldo

doi:10.1109/PVSC.2018.8547770

Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers

Sanghyun Lee
, Kent J. Price
, Edgardo Saucedo
, Sergio Giraldo

Producción científica: Conference contribution › revisión exhaustiva

2 Citas (Scopus)

Resumen

The presence of Schottky barrier near back contact limits the hole movement which influences the current-voltage characteristics and deteriorates the Voc-deficit as well. In this work, a set of CZTSe solar cells were fabricated by DC magnetron sputtering and investigated for the back contact interface between CZTSe/MoSe2 and Mo metal contact in an effort to improve a back contact barrier. By incorporating nanoscale Ge bi-layers below and below the absorber, a barrier height is considerably improved. To extract a back contact barrier height, a temperature-dependent behavior of CZTSe: Ge bi-layer devices is characterized and compared to CZTSe monolayer devices.

Idioma original	English
Título de la publicación alojada	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Páginas	3712-3714
Número de páginas	3
ISBN (versión digital)	9781538685297
DOI	https://doi.org/10.1109/PVSC.2018.8547770
Estado	Published - nov 26 2018
Evento	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duración: jun 10 2018 → jun 15 2018

Serie de la publicación

Nombre	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
País/Territorio	United States
Ciudad	Waikoloa Village
Período	6/10/18 → 6/15/18

Nota bibliográfica

Publisher Copyright:
© 2018 IEEE.

Financiación

Authors acknowledges the generous support by the Louisville Gas & Energy and Kentucky Utility Foundation.

Financiadores
Louisville Gas & Energy and Kentucky Utility Foundation

ODS de las Naciones Unidas

Este resultado contribuye a los siguientes Objetivos de Desarrollo Sostenible

Affordable and clean energy

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Acceder al documento

10.1109/PVSC.2018.8547770

Otros archivos y enlaces

Citar esto

Lee, S., Price, K. J., Saucedo, E., & Giraldo, S. (2018). Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers. En 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 3712-3714). Artículo 8547770 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). https://doi.org/10.1109/PVSC.2018.8547770

Lee, Sanghyun ; Price, Kent J. ; Saucedo, Edgardo et al. / Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. 2018. pp. 3712-3714 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

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title = "Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers",

abstract = "The presence of Schottky barrier near back contact limits the hole movement which influences the current-voltage characteristics and deteriorates the Voc-deficit as well. In this work, a set of CZTSe solar cells were fabricated by DC magnetron sputtering and investigated for the back contact interface between CZTSe/MoSe2 and Mo metal contact in an effort to improve a back contact barrier. By incorporating nanoscale Ge bi-layers below and below the absorber, a barrier height is considerably improved. To extract a back contact barrier height, a temperature-dependent behavior of CZTSe: Ge bi-layer devices is characterized and compared to CZTSe monolayer devices.",

keywords = "Back contact, cZTSe, kesterite, schottky barrier",

author = "Sanghyun Lee and Price, \{Kent J.\} and Edgardo Saucedo and Sergio Giraldo",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

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doi = "10.1109/PVSC.2018.8547770",

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Lee, S, Price, KJ, Saucedo, E & Giraldo, S 2018, Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers. En 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547770, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 3712-3714, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8547770

Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers. / Lee, Sanghyun; Price, Kent J.; Saucedo, Edgardo et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. 2018. p. 3712-3714 8547770 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Producción científica: Conference contribution › revisión exhaustiva

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AU - Lee, Sanghyun

AU - Price, Kent J.

AU - Saucedo, Edgardo

AU - Giraldo, Sergio

PY - 2018/11/26

Y1 - 2018/11/26

N2 - The presence of Schottky barrier near back contact limits the hole movement which influences the current-voltage characteristics and deteriorates the Voc-deficit as well. In this work, a set of CZTSe solar cells were fabricated by DC magnetron sputtering and investigated for the back contact interface between CZTSe/MoSe2 and Mo metal contact in an effort to improve a back contact barrier. By incorporating nanoscale Ge bi-layers below and below the absorber, a barrier height is considerably improved. To extract a back contact barrier height, a temperature-dependent behavior of CZTSe: Ge bi-layer devices is characterized and compared to CZTSe monolayer devices.

AB - The presence of Schottky barrier near back contact limits the hole movement which influences the current-voltage characteristics and deteriorates the Voc-deficit as well. In this work, a set of CZTSe solar cells were fabricated by DC magnetron sputtering and investigated for the back contact interface between CZTSe/MoSe2 and Mo metal contact in an effort to improve a back contact barrier. By incorporating nanoscale Ge bi-layers below and below the absorber, a barrier height is considerably improved. To extract a back contact barrier height, a temperature-dependent behavior of CZTSe: Ge bi-layer devices is characterized and compared to CZTSe monolayer devices.

KW - Back contact

KW - cZTSe

KW - kesterite

KW - schottky barrier

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BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

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Y2 - 10 June 2018 through 15 June 2018

ER -

Lee S, Price KJ, Saucedo E, Giraldo S. Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers. En 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. 2018. p. 3712-3714. 8547770. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8547770

Improved Back Contact Barrier of CZTSe solar cells by incorporating nanoscale Ge bi-layers

Resumen

Serie de la publicación

Conference

Nota bibliográfica

Financiación

ODS de las Naciones Unidas

ASJC Scopus subject areas

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