Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency

Sanghyun Lee; Kent J. Price; Edgardo Saucedo; Sergio Giraldo

doi:10.1109/PVSC.2018.8548287

Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency

Sanghyun Lee
, Kent J. Price
, Edgardo Saucedo
, Sergio Giraldo

Producción científica: Conference contribution › revisión exhaustiva

2 Citas (Scopus)

Resumen

We fabricated and characterized CZTSe: Nanolayer Ge (<10 nm) thin film solar cells to quantitatively demonstrate an exact device model of quantum efficiency for Ge doped CZTSe devices. The linear electric field model is developed used to fit the unique quantum efficiency as compared to empirical data at forward bias condition. This model is characterized with a consistent set of parameters from a series of measurements and literature. Using the analytical modeling method, the carrier collection profile in the absorber is calculated and closely fitted by developed mathematical expressions to identify the carrier dynamics during the quantum efficiency measurement.

Idioma original	English
Título de la publicación alojada	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Páginas	3000-3002
Número de páginas	3
ISBN (versión digital)	9781538685297
DOI	https://doi.org/10.1109/PVSC.2018.8548287
Estado	Published - nov 26 2018
Evento	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duración: jun 10 2018 → jun 15 2018

Serie de la publicación

Nombre	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
País/Territorio	United States
Ciudad	Waikoloa Village
Período	6/10/18 → 6/15/18

Nota bibliográfica

Publisher Copyright:
© 2018 IEEE.

Financiación

Authors acknowledges the generous support by the Louisville Gas & Energy and Kentucky Utility.

Financiadores
Louisville Gas & Energy and Kentucky Utility Foundation

ODS de las Naciones Unidas

Este resultado contribuye a los siguientes Objetivos de Desarrollo Sostenible

Affordable and clean energy

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Acceder al documento

10.1109/PVSC.2018.8548287

Otros archivos y enlaces

Citar esto

Lee, S., Price, K. J., Saucedo, E., & Giraldo, S. (2018). Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency. En 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 3000-3002). Artículo 8548287 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). https://doi.org/10.1109/PVSC.2018.8548287

Lee, Sanghyun ; Price, Kent J. ; Saucedo, Edgardo et al. / Improved Device Models of CZTSe : Nanolayer Ge solar cells with Quantum Efficiency. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. 2018. pp. 3000-3002 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

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title = "Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency",

abstract = "We fabricated and characterized CZTSe: Nanolayer Ge (<10 nm) thin film solar cells to quantitatively demonstrate an exact device model of quantum efficiency for Ge doped CZTSe devices. The linear electric field model is developed used to fit the unique quantum efficiency as compared to empirical data at forward bias condition. This model is characterized with a consistent set of parameters from a series of measurements and literature. Using the analytical modeling method, the carrier collection profile in the absorber is calculated and closely fitted by developed mathematical expressions to identify the carrier dynamics during the quantum efficiency measurement.",

keywords = "CZTSe, kesterite, modeling, quantum efficiency",

author = "Sanghyun Lee and Price, \{Kent J.\} and Edgardo Saucedo and Sergio Giraldo",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

month = nov,

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doi = "10.1109/PVSC.2018.8548287",

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Lee, S, Price, KJ, Saucedo, E & Giraldo, S 2018, Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency. En 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8548287, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 3000-3002, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8548287

Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency. / Lee, Sanghyun; Price, Kent J.; Saucedo, Edgardo et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. 2018. p. 3000-3002 8548287 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Producción científica: Conference contribution › revisión exhaustiva

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AU - Giraldo, Sergio

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AB - We fabricated and characterized CZTSe: Nanolayer Ge (<10 nm) thin film solar cells to quantitatively demonstrate an exact device model of quantum efficiency for Ge doped CZTSe devices. The linear electric field model is developed used to fit the unique quantum efficiency as compared to empirical data at forward bias condition. This model is characterized with a consistent set of parameters from a series of measurements and literature. Using the analytical modeling method, the carrier collection profile in the absorber is calculated and closely fitted by developed mathematical expressions to identify the carrier dynamics during the quantum efficiency measurement.

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KW - kesterite

KW - modeling

KW - quantum efficiency

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Lee S, Price KJ, Saucedo E, Giraldo S. Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency. En 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. 2018. p. 3000-3002. 8548287. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8548287

Improved Device Models of CZTSe: Nanolayer Ge solar cells with Quantum Efficiency

Resumen

Serie de la publicación

Conference

Nota bibliográfica

Financiación

ODS de las Naciones Unidas

ASJC Scopus subject areas

Acceder al documento

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