Influence of film structure and light on charge trapping and dissipation dynamics in spun-cast organic thin-film transistors measured by scanning Kelvin probe microscopy

L. C. Teague; M. A. Loth; J. E. Anthony

doi:10.1063/1.4720063

Influence of film structure and light on charge trapping and dissipation dynamics in spun-cast organic thin-film transistors measured by scanning Kelvin probe microscopy

L. C. Teague
, M. A. Loth
, J. E. Anthony

Producción científica: Article › revisión exhaustiva

3 Citas (Scopus)

Resumen

Herein, time-dependent scanning Kelvin probe microscopy of solution processed organic thin film transistors (OTFTs) reveals a correlation between film microstructure and OTFT device performance with the location of trapped charge within the device channel. The accumulation of the observed trapped charge is concurrent with the decrease in I _SD during operation (V _G = -40 V, V _SD = -10 V). We discuss the charge trapping and dissipation dynamics as they relate to the film structure and show that application of light quickly dissipates the observed trapped charge.

Idioma original	English
Número de artículo	263305
Publicación	Applied Physics Letters
Volumen	100
N.º	26
DOI	https://doi.org/10.1063/1.4720063
Estado	Published - jun 25 2012

Nota bibliográfica

Funding Information:
L.C.T. acknowledges financial support from the SRNL LDRD program. Cleanroom access was granted under CNM user proposal #23377. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. L.C.T. thanks Dr. L. Ocola, Dr. D. Rosenmann, and Dr. R. Divan at CNM for their assistance with photolithography. L.C.T. also thanks SRNL colleagues Dr. R. Zidan, Dr. S.L. Garrison, and Dr. R. Lascola for their thoughtful discussions and K. Huffman, J. DeGange, M. Hudson, B. Blackmon, and J. Jones for engineering support. J.E.A. thanks the Office of Naval Research (Contract No. N00014-11-1-0329) for their support of semiconductor development.

Financiación

L.C.T. acknowledges financial support from the SRNL LDRD program. Cleanroom access was granted under CNM user proposal #23377. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. L.C.T. thanks Dr. L. Ocola, Dr. D. Rosenmann, and Dr. R. Divan at CNM for their assistance with photolithography. L.C.T. also thanks SRNL colleagues Dr. R. Zidan, Dr. S.L. Garrison, and Dr. R. Lascola for their thoughtful discussions and K. Huffman, J. DeGange, M. Hudson, B. Blackmon, and J. Jones for engineering support. J.E.A. thanks the Office of Naval Research (Contract No. N00014-11-1-0329) for their support of semiconductor development.

Financiadores	Número del financiador
SRNL LDRD
Office of Naval Research Naval Academy	N00014-11-1-0329
U.S. Department of Energy EPSCoR
Office of Science Programs
DOE Basic Energy Sciences	DE-AC02-06CH11357

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4720063

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title = "Influence of film structure and light on charge trapping and dissipation dynamics in spun-cast organic thin-film transistors measured by scanning Kelvin probe microscopy",

abstract = "Herein, time-dependent scanning Kelvin probe microscopy of solution processed organic thin film transistors (OTFTs) reveals a correlation between film microstructure and OTFT device performance with the location of trapped charge within the device channel. The accumulation of the observed trapped charge is concurrent with the decrease in I SD during operation (V G = -40 V, V SD = -10 V). We discuss the charge trapping and dissipation dynamics as they relate to the film structure and show that application of light quickly dissipates the observed trapped charge.",

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note = "Funding Information: L.C.T. acknowledges financial support from the SRNL LDRD program. Cleanroom access was granted under CNM user proposal \#23377. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. L.C.T. thanks Dr. L. Ocola, Dr. D. Rosenmann, and Dr. R. Divan at CNM for their assistance with photolithography. L.C.T. also thanks SRNL colleagues Dr. R. Zidan, Dr. S.L. Garrison, and Dr. R. Lascola for their thoughtful discussions and K. Huffman, J. DeGange, M. Hudson, B. Blackmon, and J. Jones for engineering support. J.E.A. thanks the Office of Naval Research (Contract No. N00014-11-1-0329) for their support of semiconductor development. ",

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AU - Loth, M. A.

AU - Anthony, J. E.

N1 - Funding Information: L.C.T. acknowledges financial support from the SRNL LDRD program. Cleanroom access was granted under CNM user proposal #23377. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. L.C.T. thanks Dr. L. Ocola, Dr. D. Rosenmann, and Dr. R. Divan at CNM for their assistance with photolithography. L.C.T. also thanks SRNL colleagues Dr. R. Zidan, Dr. S.L. Garrison, and Dr. R. Lascola for their thoughtful discussions and K. Huffman, J. DeGange, M. Hudson, B. Blackmon, and J. Jones for engineering support. J.E.A. thanks the Office of Naval Research (Contract No. N00014-11-1-0329) for their support of semiconductor development.

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N2 - Herein, time-dependent scanning Kelvin probe microscopy of solution processed organic thin film transistors (OTFTs) reveals a correlation between film microstructure and OTFT device performance with the location of trapped charge within the device channel. The accumulation of the observed trapped charge is concurrent with the decrease in I SD during operation (V G = -40 V, V SD = -10 V). We discuss the charge trapping and dissipation dynamics as they relate to the film structure and show that application of light quickly dissipates the observed trapped charge.

AB - Herein, time-dependent scanning Kelvin probe microscopy of solution processed organic thin film transistors (OTFTs) reveals a correlation between film microstructure and OTFT device performance with the location of trapped charge within the device channel. The accumulation of the observed trapped charge is concurrent with the decrease in I SD during operation (V G = -40 V, V SD = -10 V). We discuss the charge trapping and dissipation dynamics as they relate to the film structure and show that application of light quickly dissipates the observed trapped charge.

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Influence of film structure and light on charge trapping and dissipation dynamics in spun-cast organic thin-film transistors measured by scanning Kelvin probe microscopy

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