Lateral heating of SiO 2/Si: Interfacial Si structure change causing tunneling current reduction

Zhi Chen; Pang Leen Ong; Yichun Wang; Lei Han

doi:10.1063/1.4709418

Lateral heating of SiO ₂/Si: Interfacial Si structure change causing tunneling current reduction

Zhi Chen, Pang Leen Ong, Yichun Wang, Lei Han

Producción científica: Article › revisión exhaustiva

3 Citas (Scopus)

Resumen

Lateral heating processing of SiO ₂/Si samples can reduce the tunneling current of SiO ₂ by 5 orders of magnitude with very good reproducibility. There is a strong correlation between the flatband voltage shift of metal-oxide-semiconductor capacitors and the tunneling current reduction. Analysis of the flatband voltage shift suggests that origin of the tunneling current reduction after lateral heating is caused by the structure change of Si, most likely tensor strained Si, near the SiO ₂/Si interface.

Idioma original	English
Número de artículo	171602
Publicación	Applied Physics Letters
Volumen	100
N.º	17
DOI	https://doi.org/10.1063/1.4709418
Estado	Published - abr 23 2012

Nota bibliográfica

Funding Information:
This research was supported by National Science Foundation (EPS-0447479 and ECCS 0609064).

Financiación

This research was supported by National Science Foundation (EPS-0447479 and ECCS 0609064).

Financiadores	Número del financiador
National Science Foundation (NSF)	EPS-0447479, ECCS 0609064

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4709418

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abstract = "Lateral heating processing of SiO 2/Si samples can reduce the tunneling current of SiO 2 by 5 orders of magnitude with very good reproducibility. There is a strong correlation between the flatband voltage shift of metal-oxide-semiconductor capacitors and the tunneling current reduction. Analysis of the flatband voltage shift suggests that origin of the tunneling current reduction after lateral heating is caused by the structure change of Si, most likely tensor strained Si, near the SiO 2/Si interface.",

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AU - Wang, Yichun

AU - Han, Lei

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