Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction

Shi Bin Li; Hong Ping Yu; Ting Zhang; Zhi Chen; Zhi Ming Wu

doi:10.1088/1674-1056/23/10/107101

Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction

Shi Bin Li
, Hong Ping Yu
, Ting Zhang
, Zhi Chen
, Zhi Ming Wu

Producción científica: Article › revisión exhaustiva

3 Citas (Scopus)

Resumen

High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method (TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6× 10¹⁴ cm^-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal (Ti/Al/Ti/Au) is deposited and annealed at 650 °C to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.

Idioma original	English
Número de artículo	107101
Publicación	Chinese Physics B
Volumen	23
N.º	10
DOI	https://doi.org/10.1088/1674-1056/23/10/107101
Estado	Published - oct 1 2014

Nota bibliográfica

Publisher Copyright:
© 2014 Chinese Physical Society and IOP Publishing Ltd.

Financiación

Financiadores	Número del financiador
National Natural Science Foundation of China (NSFC)	61371046, 61204098

ASJC Scopus subject areas

General Physics and Astronomy

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10.1088/1674-1056/23/10/107101

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title = "Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction",

abstract = "High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method (TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6× 1014 cm-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal (Ti/Al/Ti/Au) is deposited and annealed at 650 °C to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.",

keywords = "AlGaN, Ohmic contact, carrier concentration, polarization",

author = "Li, \{Shi Bin\} and Yu, \{Hong Ping\} and Ting Zhang and Zhi Chen and Wu, \{Zhi Ming\}",

note = "Publisher Copyright: {\textcopyright} 2014 Chinese Physical Society and IOP Publishing Ltd.",

year = "2014",

month = oct,

day = "1",

doi = "10.1088/1674-1056/23/10/107101",

language = "English",

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TY - JOUR

T1 - Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction

AU - Li, Shi Bin

AU - Yu, Hong Ping

AU - Zhang, Ting

AU - Chen, Zhi

AU - Wu, Zhi Ming

PY - 2014/10/1

Y1 - 2014/10/1

N2 - High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method (TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6× 1014 cm-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal (Ti/Al/Ti/Au) is deposited and annealed at 650 °C to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.

AB - High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method (TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6× 1014 cm-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal (Ti/Al/Ti/Au) is deposited and annealed at 650 °C to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.

KW - AlGaN

KW - Ohmic contact

KW - carrier concentration

KW - polarization

UR - https://www.scopus.com/pages/publications/84907610816

UR - https://www.scopus.com/pages/publications/84907610816#tab=citedBy

U2 - 10.1088/1674-1056/23/10/107101

DO - 10.1088/1674-1056/23/10/107101

M3 - Article

AN - SCOPUS:84907610816

SN - 1674-1056

VL - 23

JO - Chinese Physics B

JF - Chinese Physics B

IS - 10

M1 - 107101

ER -

Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction

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