On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

Zhi Chen; Karl Hess; Jinju Lee; Joseph W. Lyding; Elyze Rosenbaum; Isik Kizilyalli; Sundar Chetlur; Robert Huang

doi:10.1109/55.817441

On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

Zhi Chen
, Karl Hess
, Jinju Lee
, Joseph W. Lyding
, Elyze Rosenbaum
, Isik Kizilyalli
, Sundar Chetlur
, Robert Huang

Producción científica: Article › revisión exhaustiva

87 Citas (Scopus)

Resumen

The classical concept and theory suggest that the degradation of MOS transistors is caused by interface trap generation resulting from `hot carrier injection.' We report three new experiments that use the deuterium isotope effect to probe the mechanism for interface trap generation in n-MOS transistors in the presence of hot hole and electron injection. These experiments show clearly that hot carrier injection into the gate oxide exhibits essentially no isotope effect, whereas channel hot electrons at the interface exhibit a large isotope effect. This leads to the conclusion that channel hot electrons, not carriers injected into the gate oxide, are primarily responsible for interface trap generation for standard hot carrier stressing.

Idioma original	English
Páginas (desde-hasta)	24-26
Número de páginas	3
Publicación	IEEE Electron Device Letters
Volumen	21
N.º	1
DOI	https://doi.org/10.1109/55.817441
Estado	Published - ene 2000

Nota bibliográfica

Funding Information:
Manuscript received June 10, 1999; revised September, 14, 1999. This work was supported by the Office of Naval Research under Grants N0014-97-1-0587 and N00015-92-J-1519 and by the Beckman Institute for Advanced Science and Technology at the University of Illinois at Urbana-Champaign. The review of this letter was arranged by Editor D. J. Dumin.

Financiación

Manuscript received June 10, 1999; revised September, 14, 1999. This work was supported by the Office of Naval Research under Grants N0014-97-1-0587 and N00015-92-J-1519 and by the Beckman Institute for Advanced Science and Technology at the University of Illinois at Urbana-Champaign. The review of this letter was arranged by Editor D. J. Dumin.

Financiadores	Número del financiador
Office of Naval Research Naval Academy	N0014-97-1-0587, N00015-92-J-1519
Beckman Institute for Advanced Science and Technology, University of Illinois, Urbana-Champaign

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.817441

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abstract = "The classical concept and theory suggest that the degradation of MOS transistors is caused by interface trap generation resulting from `hot carrier injection.' We report three new experiments that use the deuterium isotope effect to probe the mechanism for interface trap generation in n-MOS transistors in the presence of hot hole and electron injection. These experiments show clearly that hot carrier injection into the gate oxide exhibits essentially no isotope effect, whereas channel hot electrons at the interface exhibit a large isotope effect. This leads to the conclusion that channel hot electrons, not carriers injected into the gate oxide, are primarily responsible for interface trap generation for standard hot carrier stressing.",

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AU - Kizilyalli, Isik

AU - Chetlur, Sundar

AU - Huang, Robert

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N2 - The classical concept and theory suggest that the degradation of MOS transistors is caused by interface trap generation resulting from `hot carrier injection.' We report three new experiments that use the deuterium isotope effect to probe the mechanism for interface trap generation in n-MOS transistors in the presence of hot hole and electron injection. These experiments show clearly that hot carrier injection into the gate oxide exhibits essentially no isotope effect, whereas channel hot electrons at the interface exhibit a large isotope effect. This leads to the conclusion that channel hot electrons, not carriers injected into the gate oxide, are primarily responsible for interface trap generation for standard hot carrier stressing.

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On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

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