Performance of the Raith 150 electron-beam lithography system

James G. Goodberlet; J. Todd Hastings; Henry I. Smith

doi:10.1116/1.1414018

Performance of the Raith 150 electron-beam lithography system

James G. Goodberlet
, J. Todd Hastings
, Henry I. Smith

Producción científica: Article › revisión exhaustiva

32 Citas (Scopus)

Resumen

The Raith 150's resolution, stability, intrafield distortion, overlay and stitching performance were examined. Patterning at low- and high-acceleration voltages were compared. The highest patterning resolution and pattern-placement performance were obtained for acceleration voltages above 20 kV. Pattern-placement accuracy below 20 nm, mean plus standard deviation, was demonstrated.

Idioma original	English
Páginas (desde-hasta)	2499-2503
Número de páginas	5
Publicación	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volumen	19
N.º	6
DOI	https://doi.org/10.1116/1.1414018
Estado	Published - nov 2001

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Performance of the Raith 150 electron-beam lithography system",

abstract = "The Raith 150's resolution, stability, intrafield distortion, overlay and stitching performance were examined. Patterning at low- and high-acceleration voltages were compared. The highest patterning resolution and pattern-placement performance were obtained for acceleration voltages above 20 kV. Pattern-placement accuracy below 20 nm, mean plus standard deviation, was demonstrated.",

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AU - Goodberlet, James G.

AU - Hastings, J. Todd

AU - Smith, Henry I.

PY - 2001/11

Y1 - 2001/11

N2 - The Raith 150's resolution, stability, intrafield distortion, overlay and stitching performance were examined. Patterning at low- and high-acceleration voltages were compared. The highest patterning resolution and pattern-placement performance were obtained for acceleration voltages above 20 kV. Pattern-placement accuracy below 20 nm, mean plus standard deviation, was demonstrated.

AB - The Raith 150's resolution, stability, intrafield distortion, overlay and stitching performance were examined. Patterning at low- and high-acceleration voltages were compared. The highest patterning resolution and pattern-placement performance were obtained for acceleration voltages above 20 kV. Pattern-placement accuracy below 20 nm, mean plus standard deviation, was demonstrated.

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UR - https://www.scopus.com/pages/publications/0035519213#tab=citedBy

U2 - 10.1116/1.1414018

DO - 10.1116/1.1414018

M3 - Article

AN - SCOPUS:0035519213

SN - 1071-1023

VL - 19

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

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Performance of the Raith 150 electron-beam lithography system

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