TY - GEN
T1 - Phonon-energy-coupling enhancement
T2 - 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
AU - Chen, Zhi
AU - Guo, Jun
PY - 2006
Y1 - 2006
N2 - The vibrational modes of the Si-Si and Si-O bonds exhibit enhanced energy coupling when RTP is applied to the SiO2/Si system. When applying this effect to the MOS transistors, we observed dramatic reliability improvement of MOS devices. The breakdown voltage of the gate oxide (10-20 nm) has been improved by 40%. The hot-electron related lifetime of MOS transistors has been improved by 100 times over the deuterium-annealed transistors.
AB - The vibrational modes of the Si-Si and Si-O bonds exhibit enhanced energy coupling when RTP is applied to the SiO2/Si system. When applying this effect to the MOS transistors, we observed dramatic reliability improvement of MOS devices. The breakdown voltage of the gate oxide (10-20 nm) has been improved by 40%. The hot-electron related lifetime of MOS transistors has been improved by 100 times over the deuterium-annealed transistors.
UR - http://www.scopus.com/inward/record.url?scp=34250696480&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34250696480&partnerID=8YFLogxK
U2 - 10.1109/RELPHY.2006.251351
DO - 10.1109/RELPHY.2006.251351
M3 - Conference contribution
AN - SCOPUS:34250696480
SN - 0780394992
SN - 0780394984
SN - 9780780394988
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 739
EP - 740
BT - 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Y2 - 26 March 2006 through 30 March 2006
ER -