Preparation and characteristics of vanadium oxide thin films by controlling the sputtering voltage

Xiongbang Wei; Shibin Li; Jun Gou; Xiang Dong; Xiaohui Yang; Weizhi Li; Tao Wang; Zhiming Wu; Yadong Jiang; Zhi Chen

doi:10.1016/j.optmat.2014.02.021

Preparation and characteristics of vanadium oxide thin films by controlling the sputtering voltage

Xiongbang Wei
, Shibin Li
, Jun Gou
, Xiang Dong
, Xiaohui Yang
, Weizhi Li
, Tao Wang
, Zhiming Wu
, Yadong Jiang
, Zhi Chen

Producción científica: Article › revisión exhaustiva

6 Citas (Scopus)

Resumen

Influence of sputtering voltage on the deposition process and characteristics of vanadium oxide thin films prepared by reactive DC magnetron sputtering is investigated. The target surface cleaning is controlled by adjusting the sputtering voltage. During the sputtering process, the sputtering voltage increases faster with larger O₂ gas flow rate. The sputtering voltage is easy to be stable with larger sputtering voltage. The measured sputtering voltage is correlated to the ion induced secondary electron emission (ISEE) coefficient of the target material. The ISEE coefficient of the oxidized vanadium target surface is lower than the ISEE coefficient of the vanadium metal. The semiconductor to metal (S-M) phase transition temperature decreases with the sputtering voltage, leading to the lower the corresponding temperature of the maximum temperature coefficient of resistance (TCR). By this way, O/V ratio, R, and TCR of VOx films can be controlled by adjusting the sputtering voltage.

Idioma original	English
Páginas (desde-hasta)	1419-1423
Número de páginas	5
Publicación	Optical Materials
Volumen	36
N.º	8
DOI	https://doi.org/10.1016/j.optmat.2014.02.021
Estado	Published - jun 2014

Nota bibliográfica

Funding Information:
This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61101030 and 61204098 ) and National Higher-education Institution General Research and Development Funding ( ZYGX2013J063 ).

Financiación

This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61101030 and 61204098 ) and National Higher-education Institution General Research and Development Funding ( ZYGX2013J063 ).

Financiadores	Número del financiador
National Higher-education Institution General Research and Development Funding	ZYGX2013J063
National Natural Science Foundation of China (NSFC)	61204098, 61101030
National Natural Science Foundation of China (NSFC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

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10.1016/j.optmat.2014.02.021

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title = "Preparation and characteristics of vanadium oxide thin films by controlling the sputtering voltage",

abstract = "Influence of sputtering voltage on the deposition process and characteristics of vanadium oxide thin films prepared by reactive DC magnetron sputtering is investigated. The target surface cleaning is controlled by adjusting the sputtering voltage. During the sputtering process, the sputtering voltage increases faster with larger O2 gas flow rate. The sputtering voltage is easy to be stable with larger sputtering voltage. The measured sputtering voltage is correlated to the ion induced secondary electron emission (ISEE) coefficient of the target material. The ISEE coefficient of the oxidized vanadium target surface is lower than the ISEE coefficient of the vanadium metal. The semiconductor to metal (S-M) phase transition temperature decreases with the sputtering voltage, leading to the lower the corresponding temperature of the maximum temperature coefficient of resistance (TCR). By this way, O/V ratio, R, and TCR of VOx films can be controlled by adjusting the sputtering voltage.",

keywords = "ISEE coefficient, S-M phase transition, Sputtering voltage, Vanadium oxide thin film deposition",

author = "Xiongbang Wei and Shibin Li and Jun Gou and Xiang Dong and Xiaohui Yang and Weizhi Li and Tao Wang and Zhiming Wu and Yadong Jiang and Zhi Chen",

note = "Funding Information: This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61101030 and 61204098 ) and National Higher-education Institution General Research and Development Funding ( ZYGX2013J063 ).",

year = "2014",

month = jun,

doi = "10.1016/j.optmat.2014.02.021",

language = "English",

volume = "36",

pages = "1419--1423",

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T1 - Preparation and characteristics of vanadium oxide thin films by controlling the sputtering voltage

AU - Wei, Xiongbang

AU - Li, Shibin

AU - Gou, Jun

AU - Dong, Xiang

AU - Yang, Xiaohui

AU - Li, Weizhi

AU - Wang, Tao

AU - Wu, Zhiming

AU - Jiang, Yadong

AU - Chen, Zhi

N1 - Funding Information: This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61101030 and 61204098 ) and National Higher-education Institution General Research and Development Funding ( ZYGX2013J063 ).

PY - 2014/6

Y1 - 2014/6

N2 - Influence of sputtering voltage on the deposition process and characteristics of vanadium oxide thin films prepared by reactive DC magnetron sputtering is investigated. The target surface cleaning is controlled by adjusting the sputtering voltage. During the sputtering process, the sputtering voltage increases faster with larger O2 gas flow rate. The sputtering voltage is easy to be stable with larger sputtering voltage. The measured sputtering voltage is correlated to the ion induced secondary electron emission (ISEE) coefficient of the target material. The ISEE coefficient of the oxidized vanadium target surface is lower than the ISEE coefficient of the vanadium metal. The semiconductor to metal (S-M) phase transition temperature decreases with the sputtering voltage, leading to the lower the corresponding temperature of the maximum temperature coefficient of resistance (TCR). By this way, O/V ratio, R, and TCR of VOx films can be controlled by adjusting the sputtering voltage.

AB - Influence of sputtering voltage on the deposition process and characteristics of vanadium oxide thin films prepared by reactive DC magnetron sputtering is investigated. The target surface cleaning is controlled by adjusting the sputtering voltage. During the sputtering process, the sputtering voltage increases faster with larger O2 gas flow rate. The sputtering voltage is easy to be stable with larger sputtering voltage. The measured sputtering voltage is correlated to the ion induced secondary electron emission (ISEE) coefficient of the target material. The ISEE coefficient of the oxidized vanadium target surface is lower than the ISEE coefficient of the vanadium metal. The semiconductor to metal (S-M) phase transition temperature decreases with the sputtering voltage, leading to the lower the corresponding temperature of the maximum temperature coefficient of resistance (TCR). By this way, O/V ratio, R, and TCR of VOx films can be controlled by adjusting the sputtering voltage.

KW - ISEE coefficient

KW - S-M phase transition

KW - Sputtering voltage

KW - Vanadium oxide thin film deposition

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UR - https://www.scopus.com/pages/publications/84900421906#tab=citedBy

U2 - 10.1016/j.optmat.2014.02.021

DO - 10.1016/j.optmat.2014.02.021

M3 - Article

AN - SCOPUS:84900421906

SN - 0925-3467

VL - 36

SP - 1419

EP - 1423

JO - Optical Materials

JF - Optical Materials

IS - 8

ER -

Preparation and characteristics of vanadium oxide thin films by controlling the sputtering voltage

Resumen

Nota bibliográfica

Financiación

ASJC Scopus subject areas

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