Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing

Zhi Chen; Pradeep Garg; Aarong Pangling Ong

doi:10.1109/EDSSC.2003.1283513

Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing

Zhi Chen
, Pradeep Garg
, Aarong Pangling Ong

Producción científica: Conference contribution › revisión exhaustiva

3 Citas (Scopus)

Resumen

In this paper, we report, for the first time, the significant reduction of hot-carrier-induced 1/f (flicker) noise of MOS transistors using deuterium anneal over traditional hydrogen anneal. Previous experiments by Aoki et al [1] showed that hole-related oxide traps contribute mainly to 1/f noise. Based on our studies of isotope effect of the flicker noise, we show that the Si-dangling-bond type of interface traps also contribute significantly to the 1/f noise of MOS devices.

Idioma original	English
Título de la publicación alojada	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Páginas	197-199
Número de páginas	3
ISBN (versión digital)	0780377494, 9780780377493
DOI	https://doi.org/10.1109/EDSSC.2003.1283513
Estado	Published - 2003
Evento	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Tsimshatsui, Kowloon, Hong Kong Duración: dic 16 2003 → dic 18 2003

Serie de la publicación

Nombre	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Conference

Conference	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
País/Territorio	Hong Kong
Ciudad	Tsimshatsui, Kowloon
Período	12/16/03 → 12/18/03

Nota bibliográfica

Publisher Copyright:
©2003 IEEE.

Financiación

Financiadores	Número del financiador
National Science Foundation (NSF)	DMR-9809686, ECS-0093156

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Acceder al documento

10.1109/EDSSC.2003.1283513

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@inproceedings{2d2d27025f6d4954a9d2da1f977ce6d4,

title = "Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing",

abstract = "In this paper, we report, for the first time, the significant reduction of hot-carrier-induced 1/f (flicker) noise of MOS transistors using deuterium anneal over traditional hydrogen anneal. Previous experiments by Aoki et al [1] showed that hole-related oxide traps contribute mainly to 1/f noise. Based on our studies of isotope effect of the flicker noise, we show that the Si-dangling-bond type of interface traps also contribute significantly to the 1/f noise of MOS devices.",

author = "Zhi Chen and Pradeep Garg and Ong, \{Aarong Pangling\}",

note = "Publisher Copyright: {\textcopyright}2003 IEEE.; IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 ; Conference date: 16-12-2003 Through 18-12-2003",

year = "2003",

doi = "10.1109/EDSSC.2003.1283513",

language = "English",

series = "2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003",

pages = "197--199",

booktitle = "2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003",

}

Chen, Z, Garg, P & Ong, AP 2003, Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing. En 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003., 1283513, 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003, pp. 197-199, IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003, Tsimshatsui, Kowloon, Hong Kong, 12/16/03. https://doi.org/10.1109/EDSSC.2003.1283513

Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing. / Chen, Zhi; Garg, Pradeep; Ong, Aarong Pangling.
2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003. 2003. p. 197-199 1283513 (2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003).

Producción científica: Conference contribution › revisión exhaustiva

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AU - Chen, Zhi

AU - Garg, Pradeep

AU - Ong, Aarong Pangling

PY - 2003

Y1 - 2003

N2 - In this paper, we report, for the first time, the significant reduction of hot-carrier-induced 1/f (flicker) noise of MOS transistors using deuterium anneal over traditional hydrogen anneal. Previous experiments by Aoki et al [1] showed that hole-related oxide traps contribute mainly to 1/f noise. Based on our studies of isotope effect of the flicker noise, we show that the Si-dangling-bond type of interface traps also contribute significantly to the 1/f noise of MOS devices.

AB - In this paper, we report, for the first time, the significant reduction of hot-carrier-induced 1/f (flicker) noise of MOS transistors using deuterium anneal over traditional hydrogen anneal. Previous experiments by Aoki et al [1] showed that hole-related oxide traps contribute mainly to 1/f noise. Based on our studies of isotope effect of the flicker noise, we show that the Si-dangling-bond type of interface traps also contribute significantly to the 1/f noise of MOS devices.

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U2 - 10.1109/EDSSC.2003.1283513

DO - 10.1109/EDSSC.2003.1283513

M3 - Conference contribution

AN - SCOPUS:84866022476

T3 - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

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BT - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

T2 - IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Y2 - 16 December 2003 through 18 December 2003

ER -

Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing

Resumen

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Nota bibliográfica

Financiación

ASJC Scopus subject areas

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