Semiconductor-metal phase transition properties and growth texture of vanadium dioxide films on Si₃N₄ layer

Detailed investigation is carried out to study the thermal-resistance properties of vanadium dioxide films prepared on Si₃N₄ layer. The results demonstrate the films undergo the semiconductor to metal phase transition. The corresponding temperature of the maximum TCR value in cooling process is always lower than that in heating process for the same sample. Analysis reveals the thicker the film, the lower the corresponding temperature of the maximum TCR value in cooling process. The films’ dominant phase is VO₂. As film thickness increases, (200) orientation is dominant and ratio of the grain length to width are 2: 1–3: 1.