Twisted Crystalline Organic Semiconductor Photodetectors

Sehee Jeong; Natercia Barbosa; Akash Tiwari; Emma K. Holland; Ling Yi Huang; Vinayak Bhat; Yongfan Yang; Yuze Zhang; St John Whittaker; Min Woo Kim; Aida Alaei; Pallavi Sundaram; Rochelle Spencer; Johanna Brazard; Dilhan M. Kalyon; Chad Risko; John E. Anthony; Takuji B.M. Adachi; Alexander G. Shtukenberg; Bart Kahr; Stephanie S. Lee

doi:10.1002/adfm.202212531

Twisted Crystalline Organic Semiconductor Photodetectors

Sehee Jeong, Natercia Barbosa, Akash Tiwari, Emma K. Holland, Ling Yi Huang, Vinayak Bhat, Yongfan Yang, Yuze Zhang, St John Whittaker, Min Woo Kim, Aida Alaei, Pallavi Sundaram, Rochelle Spencer, Johanna Brazard, Dilhan M. Kalyon, Chad Risko, John E. Anthony, Takuji B.M. Adachi, Alexander G. Shtukenberg, Bart KahrStephanie S. Lee

Producción científica: Article › revisión exhaustiva

16 Citas (Scopus)

Resumen

Optoelectronic properties of anisotropic crystals vary with direction requiring that the orientation of molecular organic semiconductor crystals is controlled in optoelectronic device active layers to achieve optimal performance. Here, a generalizable strategy to introduce periodic variations in the out-of-plane orientations of 5,11-bis(triisopropylsilylethynyl)anthradithiophene (TIPS ADT) crystals is presented. TIPS ADT crystallized from the melt in the presence of 16 wt.% polyethylene (PE) forms banded spherulites of crystalline fibrils that twist in concert about the radial growth direction. These spherulites exhibit band-dependent light absorption, photoluminescence, and Raman scattering depending on the local orientation of crystals. Mueller matrix imaging reveals strong circular extinction (CE), with TIPS ADT banded spherulites exhibiting domains of positive or negative CE signal depending on the crystal twisting sense. Furthermore, orientation-dependent enhancement in charge injection and extraction in films of twisted TIPS ADT crystals compared to films of straight crystals is visualized in local conductive atomic force microscopy maps. This enhancement leads to 3.3- and 6.2-times larger photocurrents and external quantum efficiencies, respectively, in photodetectors comprising twisted crystals than those comprising straight crystals.

Idioma original	English
Número de artículo	2212531
Publicación	Advanced Functional Materials
Volumen	33
N.º	19
DOI	https://doi.org/10.1002/adfm.202212531
Estado	Published - may 8 2023

Nota bibliográfica

Publisher Copyright:
© 2023 Wiley-VCH GmbH.

Financiación

This work at New York University was primarily supported by the National Science Foundation (NSF) award number DMR-2003997 and secondarily by the New York University Materials Research Science and Engineering Center (MRSEC) program of the NSF under award number DMR-1420073. The authors also acknowledge support from PSEG to advance energy innovation at Stevens Institute of Technology. The work at the University of Kentucky was supported by the NSF award number DMR-1627428 (synthetic efforts of JEA and EKY and computational efforts of LY and CR) and cooperative agreement number 1849213 (computational efforts of VB). Supercomputing resources were provided by the University of Kentucky Information Technology Department and Center for Computational Sciences (CCS). Use of the Advanced Photon Source at Argonne National Laboratory was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. The X-ray microdiffractometer with GADDS was acquired through the support of the NSF under award number CRIF/CHE-0840277 and NSF MRSEC Program under award number DMR-0820341. NB, JB and TBMA thank the University of Geneva for the financial support. The authors also thank Prof. Ayaskanta Sahu and Håvard Mølnås for access to the EQE measurement setup. This work at New York University was primarily supported by the National Science Foundation (NSF) award number DMR‐2003997 and secondarily by the New York University Materials Research Science and Engineering Center (MRSEC) program of the NSF under award number DMR‐1420073. The authors also acknowledge support from PSEG to advance energy innovation at Stevens Institute of Technology. The work at the University of Kentucky was supported by the NSF award number DMR‐1627428 (synthetic efforts of JEA and EKY and computational efforts of LY and CR) and cooperative agreement number 1849213 (computational efforts of VB). Supercomputing resources were provided by the University of Kentucky Information Technology Department and Center for Computational Sciences (CCS). Use of the Advanced Photon Source at Argonne National Laboratory was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE‐AC02‐06CH11357. The X‐ray microdiffractometer with GADDS was acquired through the support of the NSF under award number CRIF/CHE‐0840277 and NSF MRSEC Program under award number DMR‐0820341. NB, JB and TBMA thank the University of Geneva for the financial support. The authors also thank Prof. Ayaskanta Sahu and Håvard Mølnås for access to the EQE measurement setup.

Financiadores	Número del financiador
Université de Genève
New York University Materials Research Science and Engineering Center
U.S. Department of Energy EPSCoR
Office of Science Programs
University of Kentucky Information Technology Department and Center for Computational Sciences
Materials Research Science and Engineering Center, Harvard University	DMR‐0820341, DMR‐1420073
PSEG	DMR‐1627428
DOE Basic Energy Sciences	DE‐AC02‐06CH11357, CRIF/CHE‐0840277
National Science Foundation Arctic Social Science Program	1849213, DMR‐2003997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
Biomaterials
General Materials Science
Condensed Matter Physics
Electrochemistry

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10.1002/adfm.202212531

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Jeong, S., Barbosa, N., Tiwari, A., Holland, E. K., Huang, L. Y., Bhat, V., Yang, Y., Zhang, Y., Whittaker, S. J., Kim, M. W., Alaei, A., Sundaram, P., Spencer, R., Brazard, J., Kalyon, D. M., Risko, C., Anthony, J. E., Adachi, T. B. M., Shtukenberg, A. G., ... Lee, S. S. (2023). Twisted Crystalline Organic Semiconductor Photodetectors. Advanced Functional Materials, 33(19), Artículo 2212531. https://doi.org/10.1002/adfm.202212531

@article{8e10c297a0044766863606bd2b6c9649,

title = "Twisted Crystalline Organic Semiconductor Photodetectors",

abstract = "Optoelectronic properties of anisotropic crystals vary with direction requiring that the orientation of molecular organic semiconductor crystals is controlled in optoelectronic device active layers to achieve optimal performance. Here, a generalizable strategy to introduce periodic variations in the out-of-plane orientations of 5,11-bis(triisopropylsilylethynyl)anthradithiophene (TIPS ADT) crystals is presented. TIPS ADT crystallized from the melt in the presence of 16 wt.\% polyethylene (PE) forms banded spherulites of crystalline fibrils that twist in concert about the radial growth direction. These spherulites exhibit band-dependent light absorption, photoluminescence, and Raman scattering depending on the local orientation of crystals. Mueller matrix imaging reveals strong circular extinction (CE), with TIPS ADT banded spherulites exhibiting domains of positive or negative CE signal depending on the crystal twisting sense. Furthermore, orientation-dependent enhancement in charge injection and extraction in films of twisted TIPS ADT crystals compared to films of straight crystals is visualized in local conductive atomic force microscopy maps. This enhancement leads to 3.3- and 6.2-times larger photocurrents and external quantum efficiencies, respectively, in photodetectors comprising twisted crystals than those comprising straight crystals.",

keywords = "banded spherulite, crystal anisotropies, crystal twisting, melt growth, organic semiconductors",

author = "Sehee Jeong and Natercia Barbosa and Akash Tiwari and Holland, \{Emma K.\} and Huang, \{Ling Yi\} and Vinayak Bhat and Yongfan Yang and Yuze Zhang and Whittaker, \{St John\} and Kim, \{Min Woo\} and Aida Alaei and Pallavi Sundaram and Rochelle Spencer and Johanna Brazard and Kalyon, \{Dilhan M.\} and Chad Risko and Anthony, \{John E.\} and Adachi, \{Takuji B.M.\} and Shtukenberg, \{Alexander G.\} and Bart Kahr and Lee, \{Stephanie S.\}",

note = "Publisher Copyright: {\textcopyright} 2023 Wiley-VCH GmbH.",

year = "2023",

month = may,

day = "8",

doi = "10.1002/adfm.202212531",

language = "English",

volume = "33",

number = "19",

}

Jeong, S, Barbosa, N, Tiwari, A, Holland, EK, Huang, LY, Bhat, V, Yang, Y, Zhang, Y, Whittaker, SJ, Kim, MW, Alaei, A, Sundaram, P, Spencer, R, Brazard, J, Kalyon, DM, Risko, C , Anthony, JE, Adachi, TBM, Shtukenberg, AG, Kahr, B & Lee, SS 2023, 'Twisted Crystalline Organic Semiconductor Photodetectors', Advanced Functional Materials, vol. 33, n.º 19, 2212531. https://doi.org/10.1002/adfm.202212531

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T1 - Twisted Crystalline Organic Semiconductor Photodetectors

AU - Jeong, Sehee

AU - Barbosa, Natercia

AU - Tiwari, Akash

AU - Holland, Emma K.

AU - Huang, Ling Yi

AU - Bhat, Vinayak

AU - Yang, Yongfan

AU - Zhang, Yuze

AU - Whittaker, St John

AU - Kim, Min Woo

AU - Alaei, Aida

AU - Sundaram, Pallavi

AU - Spencer, Rochelle

AU - Brazard, Johanna

AU - Kalyon, Dilhan M.

AU - Risko, Chad

AU - Anthony, John E.

AU - Adachi, Takuji B.M.

AU - Shtukenberg, Alexander G.

AU - Kahr, Bart

AU - Lee, Stephanie S.

PY - 2023/5/8

Y1 - 2023/5/8

N2 - Optoelectronic properties of anisotropic crystals vary with direction requiring that the orientation of molecular organic semiconductor crystals is controlled in optoelectronic device active layers to achieve optimal performance. Here, a generalizable strategy to introduce periodic variations in the out-of-plane orientations of 5,11-bis(triisopropylsilylethynyl)anthradithiophene (TIPS ADT) crystals is presented. TIPS ADT crystallized from the melt in the presence of 16 wt.% polyethylene (PE) forms banded spherulites of crystalline fibrils that twist in concert about the radial growth direction. These spherulites exhibit band-dependent light absorption, photoluminescence, and Raman scattering depending on the local orientation of crystals. Mueller matrix imaging reveals strong circular extinction (CE), with TIPS ADT banded spherulites exhibiting domains of positive or negative CE signal depending on the crystal twisting sense. Furthermore, orientation-dependent enhancement in charge injection and extraction in films of twisted TIPS ADT crystals compared to films of straight crystals is visualized in local conductive atomic force microscopy maps. This enhancement leads to 3.3- and 6.2-times larger photocurrents and external quantum efficiencies, respectively, in photodetectors comprising twisted crystals than those comprising straight crystals.

AB - Optoelectronic properties of anisotropic crystals vary with direction requiring that the orientation of molecular organic semiconductor crystals is controlled in optoelectronic device active layers to achieve optimal performance. Here, a generalizable strategy to introduce periodic variations in the out-of-plane orientations of 5,11-bis(triisopropylsilylethynyl)anthradithiophene (TIPS ADT) crystals is presented. TIPS ADT crystallized from the melt in the presence of 16 wt.% polyethylene (PE) forms banded spherulites of crystalline fibrils that twist in concert about the radial growth direction. These spherulites exhibit band-dependent light absorption, photoluminescence, and Raman scattering depending on the local orientation of crystals. Mueller matrix imaging reveals strong circular extinction (CE), with TIPS ADT banded spherulites exhibiting domains of positive or negative CE signal depending on the crystal twisting sense. Furthermore, orientation-dependent enhancement in charge injection and extraction in films of twisted TIPS ADT crystals compared to films of straight crystals is visualized in local conductive atomic force microscopy maps. This enhancement leads to 3.3- and 6.2-times larger photocurrents and external quantum efficiencies, respectively, in photodetectors comprising twisted crystals than those comprising straight crystals.

KW - banded spherulite

KW - crystal anisotropies

KW - crystal twisting

KW - melt growth

KW - organic semiconductors

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U2 - 10.1002/adfm.202212531

DO - 10.1002/adfm.202212531

M3 - Article

AN - SCOPUS:85149503250

SN - 1616-301X

VL - 33

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 19

M1 - 2212531

ER -

Twisted Crystalline Organic Semiconductor Photodetectors

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ASJC Scopus subject areas

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